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| Ordering number : ENA1062 2SC5226A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A Features * * * VHF to UHF Wide-Band Low-Noise Amplifier Applications Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 2 70 150 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=20mA 60* Conditions Ratings min typ max 1.0 10 270* Unit A A Continued on next page. * : The 2SC5226A is classified by 20mA hFE as follows : Marking LN3 LN4 LN5 Rank 3 4 5 hFE 60 to 120 90 to 180 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408AB TI IM TC-00001340 No. A1062-1/6 2SC5226A Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol fT Cob Cre 2 S21e 1 2 S21e 2 Conditions VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz Ratings min 5 typ 7 0.75 0.5 9 12 8 1.0 1.8 1.2 max Unit GHz pF pF dB dB dB NF Package Dimensions unit : mm (typ) 7023-009 0.425 3 1.25 2.1 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 3 2 hFE -- IC VCE=5V 0.2 0.3 0.15 2 fT -- IC VCE=5V Gain-Bandwidth Product, fT -- GHz 10 7 5 DC Current Gain, hFE 100 7 5 3 2 3 2 10 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR07919 1.0 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR07920 Collector Current, IC -- mA 3 2 Cob -- VCB Reverse Transfer Capacitance, Cre -- pF f=1MHz Collector Current, IC -- mA 3 2 Cre -- VCB f=1MHz Output Capacitance, Cre -- pF 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V ITR07921 Collector-to-Base Voltage, VCB -- V ITR07922 No. A1062-2/6 2SC5226A 14 S21e2 -- IC f=1GHz 12 NF -- IC VCE=5V f=1GHz Forward Transfer Gain,S21e2 -- dB 12 10 V V CE =2 V 10 Noise Figure, NF -- dB 5 7 10 2 3 5 7 100 2 ITR07924 8 V CE = 5 8 6 6 4 4 2 2 0 3 5 7 1.0 2 3 0 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 160 150 140 120 100 80 60 40 20 0 0 PC -- Ta Collector Current, IC -- mA 7 100 2 ITR07923 Collector Dissipation, PC -- mW 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C ITR07925 No. A1062-3/6 2SC5226A S Parameters f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 j25 j100 j150 j10 j200 j250 150 f=100MHz, 200MHz to 2000MHz(200MHz Step) 0.1GH z 120 90 VCE=5V IC=20mA 60 VCE =5V IC =7mA 2.0GHz 0 10 2.0GHz 2.0GHz 25 50 100 150 250 VCE=2V 0.1GHz I =3mA C 30 0.1GHz 180 2.0GHz 2.0GHz 8 2.0GHz 4 12 16 20 0 VCE=2V IC=3mA VCE=5V IC=20mA --j10 0.1GHz VCE=5V IC=7mA 0.1GHz --j25 --j50 --j250 --j200 --j150 0.1GHz --j100 --150 --30 --120 ITR07926 --60 --90 ITR07927 f=100MHz, 200MHz to 2000MHz(200MHz Step) 90 120 f=100MHz, 200MHz to 2000MHz(200MHz Step) 2.0GHz j50 60 2.0GHz j25 j100 j150 j10 j200 j250 VCE=5V IC=20mA 150 2.0GHz VCE=2V 30 IC=3mA VCE=5V IC=7mA 180 0.1GHz 0.1GHz 0.04 0.08 0.12 0.16 0.2 0 0.1GHz 0 10 25 50 100 150 250 VCE=5V IC=7mA 2.0GHz VCE=5V IC=20mA --j10 --150 --30 2.0GHz 2.0GHz V =2V CE IC=3mA --j250 --j200 --j150 --j100 --j25 --120 --90 --60 ITR07928 --j50 ITR07929 No. A1062-4/6 2SC5226A S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.720 0.612 0.497 0.456 0.440 0.436 0.434 0.433 0.433 0.434 0.439 S11 --46.0 --80.9 --121.3 --143.5 --157.6 --167.5 --176.1 176.6 170.9 165.0 159.6 S21 17.973 13.927 8.656 6.080 4.725 3.864 3.258 2.847 2.329 2.252 2.057 S21 148.5 127.3 105.0 92.8 84.3 77.0 70.3 64.5 57.4 54.2 49.2 S12 0.030 0.047 0.066 0.079 0.094 0.110 0.126 0.143 0.160 0.178 0.197 S12 68.5 57.1 51.3 52.9 55.4 56.8 57.9 58.4 58.9 58.6 58.1 S22 0.880 0.697 0.479 0.382 0.339 0.323 0.312 0.304 0.296 0.293 0.294 S22 --23.6 --37.6 --47.6 --50.5 --51.8 --53.4 --55.8 --58.3 --62.0 --65.0 --68.1 VCE=5V, IC=20mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.481 0.420 0.391 0.386 0.381 0.382 0.385 0.388 0.390 0.391 0.394 S11 --78.8 --119.2 --151.6 --166.4 --175.9 178.2 172.1 166.7 162.1 156.7 152.1 S21 29.795 19.008 10.416 7.084 5.407 4.401 3.701 3.217 2.839 2.534 2.319 S21 132.9 112.2 95.4 86.6 80.1 74.1 68.5 63.6 58.8 54.3 50.1 S12 0.022 0.033 0.052 0.071 0.092 0.114 0.134 0.156 0.176 0.197 0.219 S12 63.9 60.8 64.7 67.2 68.4 67.8 66.8 65.6 64.0 62.4 60.6 S22 0.707 0.470 0.296 0.236 0.213 0.208 0.204 0.202 0.199 0.197 0.197 S22 --38.2 --51.1 --55.3 --56.1 --56.6 --57.9 --60.7 --63.5 --67.9 --71.2 --74.2 VCE=2V, IC=3mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.858 0.782 0.653 0.588 0.557 0.543 0.536 0.533 0.527 0.525 0.528 S11 --32.4 --60.7 --101.1 --126.5 --143.7 --156.3 --166.8 --175.5 177.0 170.3 163.8 S21 9.413 8.187 5.855 4.337 3.444 2.871 2.446 2.145 1.904 1.714 1.564 S21 157.2 138.5 113.8 98.4 87.7 78.5 70.5 63.5 57.1 51.7 45.9 S12 0.040 0.070 0.101 0.114 0.122 0.130 0.137 0.146 0.155 0.168 0.183 S12 72.6 59.2 44.5 39.1 38.0 38.6 40.3 42.5 45.0 47.3 49.2 S22 0.945 0.833 0.637 0.515 0.454 0.426 0.407 0.393 0.382 0.379 0.378 S22 --16.5 --29.3 --43.2 --50.0 --53.8 --57.1 --60.3 --63.8 --68.0 --72.0 --75.8 No. A1062-5/6 2SC5226A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A1062-6/6 |
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